Vortex-EM® silicon drift X-ray detectors feature the largest active area single element detector (50 mm2) available of its kind. Vortex-EM® detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution(<136 eV FWHM at Mn Kα is typical) and a high count rate capability (input rate >1 Mcps) at 0.25 µs PT with an output count rate of 600 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with virtually zero loss in energy resolution and no peak shift with count rate.

Typical Applications

• X-ray fluorescence (XRF) spectroscopy - both bulk and micro-
• X-ray diffraction (XRD)
• Micro-analysis for SEM and TEM
• Synchrotron radiation applications
• Process control
• Fast X-ray mapping

The Vortex-EM^® is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 3 minutes.

The Vortex-EM^® X-ray spectroscopy system includes a detector unit and control box, which includes power supplies for the detector and TEC, a digital pulse processor with PI-SPEC Software.

The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature

Features

• Extended probe (300 mm)
• Large area, single-element silicon drift detector (~50 mm²)
• Superb energy resolution
• Detector temperature stabilization
• Additional sizes are available under special contracts
• Small and compact package for minimum vibration
• Digital pulse processor (DPP) with PI-SPEC Software

Vortex-EM^® Specifications and Perfromance Data:
(Adobe Acrobat PDF format)